21% Efficiency Silicon Heterojunction Solar Cells Produced with Very High Frequency Pecvd
نویسندگان
چکیده
Silicon heterojunction solar cells have high opencircuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (aSi:H) layers deposited by plasma-enhanced chemical vapor deposition (PECVD). By using in-situ plasma diagnostics and ex-situ film characterization, we show that the best a-Si:H films for passivation are produced from deposition regimes close to the amorphous-tocrystalline transition. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for heterojunction solar cells. 4 cm solar cells were produced with fully industry-compatible processes, yielding open-circuit voltages up to 725 mV and aperture area efficiencies up to 21%.
منابع مشابه
SiliconPV 2011
In silicon heterojunction solar cells, the passivation of the crystalline silicon wafer surfaces and fabrication of emitter and back surface field are all performed by intrinsic and doped amorphous silicon thin layers, usually deposited by plasma-enhanced chemical vapor deposition (PECVD). By using in-situ diagnostics during PECVD, it is found that the passivation quality of such layers directl...
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